vishay TSOP7000 document number 82147 rev. 6, 10-jun-03 vishay semiconductors www.vishay.com 1 16672 1 2 3 ir receiver for high data rate pcm at 455 khz description the TSOP7000 is a miniaturized receiver for infrared remote control and ir data transmission. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the operation with high data rates and long distances. features ? photo detector and preamplifier in one package internal bandfilter for pcm frequency internal shielding against electrical field disturbance ttl and cmos compatibility output active low small size package special features data rate 20 kbit/s supply voltage 2.7 - 5.5 v short settling time after power on high envelope duty cycle can be received enhanced immunity against disturbance from energy saving lamps mechanical data pinning: 1 = out, 2 = gnd, 3 = v s block diagram application circuit 10 k ? 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit 16841 c 1 = 4.7 f tsopxxxx out gnd circuit c r 1 =47 ? +v s gnd transmitter with tshfxxxx v s r 1 +c 1 recommended to suppress power supply disturbances. v o r 2 >= 1k ? r 2 optional for improved pulse forming. 16843
www.vishay.com 2 document number 82147 rev. 6, 10-jun-03 vishay TSOP7000 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and optical characteristics t amb = 25 c, unless otherwise specified parameter te s t c o n d i t i o n symbol va lu e unit supply voltage pin 3 v s -0.3 to + 6.0 v voltage at output to supply pin 1 v s - v o -0.3 to (v s + 0.3) v supply current pin 3 i s 5 ma output voltage pin 1 v o -0.3 to + 6.0 v output current pin 1 i o 15 ma junction temperature c 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c soldering temperature t 10 s, 1 mm from case t sd 260 c power consumption p tot 30 mw parameter test condition symbol min typ. max unit supply current (pin 3) dark ambient i sd 2.0 2.7 ma e v = 40 klx, sunlight i sh 2.3 ma supply voltage (pin 3) v s 2.7 5 5.5 v transmission distance p = 870 nm, ir diode tshf5400, i f = 300 ma d max 20 m p = 950 nm, ir diode tsal6400, i f = 300 ma d max 12 m threshold irradiance p = 870 nm, optical test signal of fig.1 e e min 0.8 1.5 mw/m 2 maximum irradiance optical test signal of fig.1 e e max 30 w/m 2 output voltage low (pin 1) 1 k ? external pull up resistor v ql 100 mv output voltage high (pin 1) no external pull-up resistor v qh v s - 0.25 v bandpass filter quality q 10 out-pulse width tolerance optical test signal of fig.1, 1.5 mw/m 2 e e 30 w/m 2 ? tpo - 15 + 5 + 15 s delay time of output pulse optical test signal of fig.1, e e > 1.5 mw/m 2 t don 15 36 s receiver start up time valid data after power on t v 50 s falling time leading edge of output pulse t f 0.4 s rise time no external pull up resistor t r 12 s 1 k ? external pull up resistor t r 1.2 s directivity angle of half transmission distance ? 1/2 45 deg
vishay TSOP7000 document number 82147 rev. 6, 10-jun-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. output function figure 2. output fucntion (mit jitter) figure 3. output pulse diagram (t don , t po ) e e v q v qh v ql optical test signal (f=455khz, 10 cycles/burst) output signal of TSOP7000 t pi =22 s t t don t po t f 16792 2.2 s t r 50% 90% 10% t po =t pi ? 15 s > 48.6 s (min. duty cycle) t e e v o v oh v ol t optical test signal (ir diode tshf5400, p 870 nm, i f = 300 ma, f = 455 khz, 10 cycles/burst) output signal of TSOP7000 j tdon t don t po jitter of leading edge jitter of output pulse width j tpo 16755 t pi =22 s t 0 5 10 15 20 25 30 35 0.1 1.0 10.0 100.0 1000.010000.0 100000.0 e e ? irradiance (mw/m 2 ) 16790 don t , t output pulse length ( s ) output pulse width ? t po delay time ? t don 1 10 100 1000 10000 100000 n = 10 cycles/burst po p figure 4. jitter of output pulse figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient 0 5 10 15 20 25 30 0.1 1.0 10.0 100.0 1000.010000.0 100000.0 e e ? irradiance (mw/m 2 ) 16791 j n=10 cycles/burst p jitter ? t don jitter ? t po 1 10 100 1000 10000 100000 tdon, tpo j ? jitter of output pulse ( s ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 300 350 400 450 500 550 600 f ? frequency ( khz ) 16751 / e e min e rel e ? responsitivity 0 2 4 6 8 10 12 14 0.01 0.10 1.00 10.00 100.00 e ? dc irradiance (w/m 2 ) 16786 e min e ? threshold irradiance (mw/m ) 2 correlation with ambient light sources (disturbanceeffect): 10 w/m 2 = 1.4 klx (stand.illum.a,t = 2855 k) 10 w/m 2 = 10 klx (daylight,t = 5900 k)
www.vishay.com 4 document number 82147 rev. 6, 10-jun-03 vishay TSOP7000 vishay semiconductors figure 7. sensitivity vs. supply voltage figure 8. rel. sensitivity vs. burstlength figure 9. supply current vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v s ? supply voltage ( v ) 16787 sensitivity in dark ambient e min e ? threshold irradiance (mw/m ) 2 0.5 0.6 0.7 0.8 0.9 1.0 1.1 n - burstlength ( carriercycles/burst ) 16788 e min e - relative sensitivity 26 22 18 14 28 24 20 16 12 10 8 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 5 1525354555657585 t amb - ambient t emperature ( c) 16754 i - supply current ( ma ) s v s =5.5v v s =2.7v -5 -15 -25 figure 10. relative spectral sensitivity vs. wavelength figure 11. directivity 0.0 0.2 0.4 0.6 0.8 1.0 1.2 750 800 850 900 950 1000 1050 1100 1150 - wavelength ( nm ) 16789 s ( ) - relative spectral sensitivity rel 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel - relative transmission distance
vishay TSOP7000 document number 82147 rev. 6, 10-jun-03 vishay semiconductors www.vishay.com 5 recommendation for suitable data for- mats the circuit of the TSOP7000 is designed in that way that disturbance signals are identified and unwated output pulses due to noise or disturbances are avoided. a bandpass filter, an automatic gain control and an integrator stage is used to suppress such dis- turbances. the distinguishing marks between data signal and disturbance are carrier frequency, burst length and the envelope duty cycle. the data signal should fullfill the following conditions: the carrier frequency should be close to 455 khz. the burstlength should be at least 22 s (10 cycles of the carrier signal) and shorter than 500 s. the separation time between two consecutive bursts should be at least 26 s. if the data bursts are longer than 500 s then the envelope duty cycle is limited to 25 % the duty cycle of the carrier signal (455 khz) may be between 50 % (1.1 s pulses) and 10 % (0.2 s pulses). the lower duty cycle may help to save bat- tery power.
www.vishay.com 6 document number 82147 rev. 6, 10-jun-03 vishay TSOP7000 vishay semiconductors package dimensions in mm 16003
vishay TSOP7000 document number 82147 rev. 6, 10-jun-03 vishay semiconductors www.vishay.com 7 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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